0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC5343SF features low collector saturation voltage: v ce =0.25v(max.) low output capacitance:c ob =2pf(typ.) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v collector current i c 150 ma collector dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo ic =100a , i e =0 60 v collector-emitter breakdown voltage bv ceo i c =1ma , i b =0 50 v emitter-base breakdown voltage bv ebo i e =10a, i c =0 5 v collector cutoff current i cbo v cb =60v, i e =0 0.1 a emitter cutoff current i ebo v eb =5v, i c =0 0.1 a dc current transfer ratio h fe v ce =6v, i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c /i b =100ma/10ma 0.25 v transition frequency f t v ce =10v, i c =1ma, 80 mhz output capacitance c ob v cb =10v, i e =0, f=1mhz 2 3.5 pf noise figure nf v ce =6v, i c =0.1ma, f=1khz, r g =10k 10 db h fe classification marking rank o y g l hfe 70 140 120 240 200 400 300 700 da sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123
|
